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Figure 9
(a) A representative synchrotron plane-wave topograph for an unbent silicon sample implanted with an average dose of 1 × 1017 ions cm−2 of 1 MeV protons. All points of the topograph correspond to the same angular difference from the substrate maximum, and the observed fringes correspond to the dose changes resulting in different positions of subsidiary interference maxima. (b) A representative synchrotron plane-wave topograph for AlxGa1−xAs/GaAs epitaxic layers with x = 0.43 implanted with a dose of 2.4 × 1014 ions cm−2 of 1.5 MeV Se ions. The left-hand side corresponds to the implanted area and the strongest black stripe in the upper part corresponds to the implanted layer maximum. The strong stripe on the lower right-hand side is due to the epitaxic layer peak in the non-implanted region. The horizontal widths of the images are approximately 7 mm.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 7| Part 5| September 2000| Pages 318-325
doi:10.1107/S0909049500009420
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