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Figure 4
Double-crystal topograph of a Lely-grown silicon carbide (4H-SiC) sample, taken with a synchrotron double-crystal (n,−m) setup using a bendable perfect silicon monochromator [symmetrical 333 monochromator reflection in the Bragg case, FWHM of the monochromator reflection 1.75″, E = 8.7 keV, symmetrical 0 0 12 sample reflection]: (a) before local Bragg-angle adaptation (plane monochromator, plane sample); (b) after local Bragg-angle adaptation (bent monochromator, plane sample).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 9| Part 5| August 2002| Pages 282-286
doi:10.1107/S0909049502010294
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