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Figure 6
Double-crystal topograph of a silicon sample with superposed test circuits, taken with a synchrotron double crystal (n,−m) setup using a bendable perfect silicon monochromator [symmetrical 444 monochromator reflection in the Bragg case, FWHM of the monochromator reflection 5.7″, E = 11.58 keV, symmetrical 008 sample reflection (Bragg case), FWHM 4.8″]: (a) before compensation of sample bending and local Bragg-angle adaptation (plane monochromator, bent sample); (b) after compensation of sample bending and local Bragg-angle adaptation (bent monochromator, bent sample).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 9| Part 5| August 2002| Pages 282-286
doi:10.1107/S0909049502010294
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