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Figure 4
Temperature-dependent luminescence excitation characteristics of natural crystalline samples of (a) quartz (SiO2) and (b) sodium feldspar (NaAlSi3O8) across the band edges, using MoLES. In both cases, broad-band detection is used, centred at 3.6 ± 0.4 eV. The band edges are clearly defined by the rapid cut-off in the luminescence emission when increasing the stimulation energy; these are measured at between 7.5 eV (feldspar, 300 K) and 8.7 eV (quartz indirect gap). Luminescence stimulated using sub-band-gap excitation derives from deep-lying defect centres.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 10| Part 6| October 2003| Pages 461-466
doi:10.1107/S0909049503019137
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