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Figure 18
Schematic drawings of MOS-type DEPFETs with circular (left) and linear (right) geometry. Signal charge is collected in a potential well (internal gate) below the FET gate, thereby increasing the conductivity of and current within the transistor channel. Collected charges can be drained towards the clear contact by applying voltage pulses to the clear contact and/or the clear gate.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 13| Part 2| March 2006| Pages 99-109
https://doi.org/10.1107/S0909049506002214
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