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Figure 4
Magnetic tunnel junctions at beamline DEIMOS. (a) Coarse sample scan at 788 eV (Co L3-edge) of the sample. The region of electrical interest is outlined in red. (b) Visible light picture of a sample containing 77 MTJs mounted on a DEIMOS chip, with five MTJs bonded in four-point mode via the 12 pins. (c) High-resolution scan (20 µm steps) of the probed MTJs. The low signal corresponds to metal contacts on both the lower and the top electrodes, whereas the red portions correspond to probing the lower electrode between the top electrode contacts. (d) Magnetotransport measurements at DEIMOS beamline. Resistance as a function of the magnetic field R(H) with an applied voltage of 5 mV at room temperature for three different MTJs. No X-rays were applied.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 23| Part 3| May 2016| Pages 652-657
doi:10.1107/S1600577516002551
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