Figure 1
Crystal structure drawings of (a) RbGa2As(HAsO4)6 and (b) RbGa(HAsO4)2 in views along the b axis. A part of the GaO6 octahedra is replaced by AsO6 octahedra in RbGa2As(HAsO4)6; the corresponding layers (see Figs. 2 and 3) are compressed along c and the corresponding void remains vacant of Rb atoms. |