 | Acta Crystallographica Section E Acta Crystallographica Section E CRYSTALLOGRAPHIC COMMUNICATIONS |
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![[Figure 2]](ff2155fig2mag.jpg)
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Figure 2
Crystal structure drawings of (a) RbGa(HAsO4)2 and (b) RbGa2As(HAsO4)6 inequal layers, viewed along the c axis. In this layer, the GaO6 octahedra are replaced by AsO6 octahedra in RbGa2As(HAsO4)6 (b). Since the unit-cell dimensions in directions a and b are slightly longer in RbGa2As(HAsO4)6 and the AsO6 octahedra are smaller than the corresponding GaO6 octahedra, the (Ga/As)As6O24 units within this layer move further apart – leading to longer D—H⋯A distances and a compressed (along c) void that is too small for Rb atoms (compare Fig. 1 ![[link]](../../../../../../logos/arrows/e_arr.gif) ). |
![[Figure 2]](ff2155fig2.jpg)
| CRYSTALLOGRAPHIC COMMUNICATIONS |
ISSN: 2056-9890
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