Détermination précise de la composition de couches epitaxiées Ga_1−xIn_xP (0≤x≤0,10)

The chemical composition of Ga_1−xIn_xP (0 ≤ x ≤ 0.10) alloys epitaxically grown on GaP substrates has been determined by electron microprobe analysis and by lattice-parameter measurement (a). The a(x) calibration curve follows Vegard's law which confirms the regular character of the solid solution and the existence of strain relaxation in the epitaxic layers.