Buy article online - an online subscription or single-article purchase is required to access this article.
![j logo](https://journals.iucr.org/logos/jicons/j_36x36.png)
The chemical composition of Ga1−xInxP (0 ≤ x ≤ 0.10) alloys epitaxically grown on GaP substrates has been determined by electron microprobe analysis and by lattice-parameter measurement (a). The a(x) calibration curve follows Vegard's law which confirms the regular character of the solid solution and the existence of strain relaxation in the epitaxic layers.