Detection of an ordered-structure fraction in amorphous silicon

Wang, X.-D.; Chen, B.; Wang, H.-F.; Zheng, X.; Liu, S.-J.; Wang, J.-B.; Li, B.; Yu, S.-M.; Cui, Z.-X.

doi:10.1107/S1600576716002545

Detection of an ordered-structure fraction in amorphous silicon

X.-D. Wang, B. Chen, H.-F. Wang, X. Zheng, S.-J. Liu, J.-B. Wang, B. Li, S.-M. Yu and Z.-X. Cui

Amorphous silicon (a-Si) films were prepared by radio frequency magnetron sputtering. Spectroscopic ellipsometry (SE) was utilized to detect an ordered-structure fraction in a-Si. The SE analysis of a-Si films with different thicknesses (7.0–140.0 nm) demonstrates that no more than 2.81% of medium-range order exists in the samples, and interestingly, there is a thickness dependence of optical constants for a-Si in the range of 1.5–5.0 eV.

Keywords: amorphous silicon; medium-range order; continuous random networks; spectroscopic ellipsometry.

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Detection of an ordered-structure fraction in amorphous silicon

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