view article
Figure 14
The change in the horizontal (top) and vertical (bottom) beam position from the mean for the 4H-SiC and the sc-diamond XBPMs. An external bias voltage of 5 V was applied to both devices.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 30| Part 5| September 2023| Pages 876-884
https://doi.org/10.1107/S1600577523005623
Follow J. Synchrotron Rad.
Sign up for e-alerts
E-alerts
Follow J. Synchrotron Rad. on Twitter
Twitter
Follow us on facebook
Facebook
Sign up for RSS feeds
RSS