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Figure 4
Optimization of the IBF process parameters. (a) Ion beam current profiles measured using a `Faraday cup' intensity monitor, for a beam passing through a 1 mm × 8 mm aperture at beam voltages between 650 V and 800 V. Larger beam voltages yield an optimized profile for figuring. (b) Cross-sectional SAM measurements of craters etched on a Si wafer for beam voltages between 650 V and 800 V. Similarly to the Faraday cup measurements, a larger beam voltage gives an optimal removal profile. (c) Cross-sectional SAM measurements of craters etched on a Si wafer at a beam voltage of 800 V at different distances between the source and the sample. When the sample is closer to the source, the resulting crater is deeper and narrower, which is preferable for figuring. (d) A comparison between SAM and HDX measurements of the radius of curvature of a Si mirror over 50 mm. This indicates that the SAM gives good agreement with the HDX for coarse measurements.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 31| Part 4| July 2024| Pages 706-715
https://doi.org/10.1107/S1600577524004594
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