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![[Figure 6]](xl5032fig6mag.jpg)
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Figure 6
Temporal stability and determination of the removal rate of the ion beam at fixed parameters. (a) HDX Fizeau interferometry of the height profile of the Si test wafer to check the temporal stability of the ion beam. Two rows of etched footprints are visible. Footprints 1–4 (top row) were etched for the same length of time (240 s) and show consistent crater depths and widths. Footprints 5–8 (bottom row) were etched for increasing amounts of time (120 s, 240 s, 360 s and 480 s, respectively), and the craters increase in amplitude with etching time. (b) Analysis of removal rate and beam widths for footprints 1–4. Both the removal rate and the widths σx and σy remain constant with time, showing the ion beam has good temporal stability. (c) Analysis of the removal rate and beam width for footprints 5–8. The removal rate remains constant at around 0.32 nm s−1, showing that the removal from the ion beam is very linear. The beam width slightly increases, but generally remains stable at around σx = 0.63 mm and σy = 0.61 mm, confirming the linearity of removal during the ion beam figuring process. |
![[Figure 6]](xl5032fig6.jpg)
 | JOURNAL OF SYNCHROTRON RADIATION |
ISSN: 1600-5775
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