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Figure 9
(a) Photograph of the Si mirror used for the temperature test. A temperature sensor was installed at the top of the mirror (labelled). (b) Graph of temperature over time when a raster path was etched on the sample with the ion beam, with a total etching time of 1 h and 5 min. The sample temperature increased dramatically during etching by over 80°C, followed by a rapid fall after etching completed.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 31| Part 4| July 2024| Pages 655-669
https://doi.org/10.1107/S1600577524002935
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