Comparing single-shot damage thresholds of boron carbide and silicon at the European XFEL

Tavakkoly, M.; Chalupsky, J.; Hajkova, V.; Hillert, W.; Jelinek, S.; Juha, L.; Makita, M.; Mazza, T.; Meyer, M.; Montano, J.; Sinn, H.; Vozda, V.; Vannoni, M.

doi:10.1107/S1600577524007318

Journal of Synchrotron Radiation Journal of
Synchrotron Radiation

IUCr IT WDC

home archive editors for authors for readers submit open access

view article

Figure 3
Normalized fluence versus damaged area at 1 keV. Each damaged area was measured for every pulse energy, with the red curve representing the beam profile. (Top) Silicon with threshold energy of 261 µJ. (Bottom) B₄C with threshold energy of 549 µJ.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 31| Part 5| September 2024| Pages 1067-1070

https://doi.org/10.1107/S1600577524007318

Open

access

Follow J. Synchrotron Rad.

Search IUCr Journals		doi		Advanced search
Author		volume	page