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Figure 1
(a) Silicon crystal tangential deformation slope using the model of Khosroabadi et al. (2024BB8). Threshold power levels PC are defined as values at which deformation starts to increase steeply. (b) Experimental power values in Table 1[link], plotted along threshold critical power against power spatial density. We have used KSi-Cu = 2000 W m−2 K−1.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 32| Part 4| July 2025| Pages 919-923
https://doi.org/10.1107/S160057752500342X
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