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Figure 1
(a) The simulated reflectivity of an Si/[Cu (3.5 nm)/Nb (2.0 nm)]N=10 multilayer at Cu Kα (E = 8048 eV), the Cu K-absorption edge (E = 8980.5 eV) and Nb K-absorption edge (E = 18983.0 eV), where N is the number of layer pairs. The curves are shifted vertically for better clarity. (b) Sensitivity of RXRR to Cu and Nb layer thickness variations at the Cu K-absorption edge.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 33| Part 3| May 2026| Pages 708-714
https://doi.org/10.1107/S1600577526001827
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