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Figure 4
SEM images of center-stop structures patterned by PFIB lithography. (a) CS patterned from the frontside of the SiC substrate. The damage of the support arms, which caused the central disk to be electrically insulated from the rest of the diode, can be observed in the image. (b) CS patterned from the backside of the SiC substrate. The junction of the diode is not damaged in the support arms, allowing for a good electrical contact of the central disk with the rest of the diode. |

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