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Figure 6
(a) STXM image of the X-ray beam illuminating the SiC OSA, where the zeroth-order focus (outer ring) and the first-order focus (central disk) can be observed. (b) Response of the four individual sectors of the SiC diode [marked in (a)] achieved by scanning the OSA across the beam defined by the Fresnel zone plate installed in the PolLux STXM. The response of each channel, as expected, is larger when the beam irradiates the corresponding diode sector. Sector 3 shows no response due to a faulty contact.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 33| Part 5| September 2026|
https://doi.org/10.1107/S1600577526007113
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