Determination of the three-dimensional structure of dislocations in silicon by synchrotron white X-ray topography combined with a topo-tomographic technique

Kawado, S.; Taishi, T.; Iida, S.; Suzuki, Y.; Chikaura, Y.; Kajiwara, K.

doi:10.1107/S0909049504012609

Journal of Synchrotron Radiation Journal of
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Figure 6
Schematic illustration showing the results of identification of the observed dislocations A to E. Dislocations A, B and C do not lie on the identical (111) plane. Such representation is adopted so as to avoid unnecessary complications. Dislocations D and E are also represented in the same way.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 11| Part 4| June 2004| Pages 304-308

doi:10.1107/S0909049504012609

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