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Figure 9
CCD frame measured in GIXD geometry for a multilayered InGaAs QD sample collected in the vicinity of the GaAs 022 substrate reflection (αi = 0.5°). T = 30 mm, D = 1000 mm, s2 = 1 mm. Besides the substrate reflection (S), the intensity distribution is caused by the sample surface and interfaces (CTR), the inhomogeneous strain distribution (W) and the spatial ordering (P) of the QDs.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 15| Part 6| October 2008| Pages 549-557
doi:10.1107/S0909049508023856
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